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t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 1 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? military radar ? civilian radar ? professional and military radio communications ? test instrumentation ? wideband or narrowband amplifiers ? jammers product features functional block diagram ? frequency: dc to 6 ghz ? output power (p3db): 30 w at 6 ghz ? linear gain: >14 db at 6 ghz ? operating voltage: 28 v ? low thermal resistance package general description pin configuration the triquint t1g6003028-fl is a 30 w (p 3db ) discrete gan on sic hemt which operates from dc to 6 ghz. the device is constructed with triquint?s proven 0.25 m process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request . pin # symbol 1 vd/rf out 2 vg/rf in flange source ordering information material no. part no. description eccn 1095873 t1g6003028-fl packaged part: flanged ear99 1093989 t1g6003028-fs- evb1 5.4-5.9 ghz eval. board ear99
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 2 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain to gate voltage, vd ? vg 40 v drain voltage, vd +40 v gate voltage, vg -8 to 0 v drain current, id 5.5 a gate current, ig -10 to 10 ma power dissipation, pdiss 47.5 w rf input power, cw, t = 25oc 40 dbm channel temperature, tch 275 o c mounting temperature (30 sec) 320 o c storage temperature -40 to 150 o c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation o f the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 28 v idq 200 ma id (peak current) 2500 ma vg -3.6 v channel temperature, tch 205 o c power dissipation, pdiss (cw) 30 w power dissipation, pdiss (pulse) 40 w electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications recommended operating conditions apply unless other wise specified: t a = 25 c, vd = 28 v, idq = 200 ma, vg = -3.6 v rf characteristics characteristics symbol min typ max units load pull performance at 3.0 ghz (v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%) linear gain g lin 15.2 db output power at 3 db gain compression p 3db 33.5 w drain efficiency at 3 db gain compression de 3db 68.2 % power-added efficiency at 3 db gain compression pae 3db 64.1 % gain at 3 db compression g 3db 12.2 db load pull performance at 6.0 ghz (v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%) linear gain g lin 14.5 db output power at 3 db gain compression p 3db 33.0 w drain efficiency at 3 db gain compression de 3db 50.0 % power-added efficiency at 3 db gain compression pae 3db 46.5 % gain at 3 db compression g 3db 11.5 db performance at 5.60 ghz in the 5.4 to 5.9 ghz eval. board (v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%) linear gain g lin 12.0 14.0 db output power at 3 db gain compression p 3db 22.5 32.5 w drain efficiency at 3 db gain compression de 3db 45.0 50.0 % gain at 3 db compression g 3db 9.0 11.0 db narrow band performance at 5.60 ghz (v ds = 28 v, i dq = 200 ma, cw at p1db ) impedance mismatch ruggedness vswr 10:1
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 3 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information test conditions t ch (c) jc (c/w) dc at 85 c 205 4.0 note: thermal resistance, jc , measured to bottom of package
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 4 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? load pull smith chart rf performance that the device typically exhibits w hen placed in the specified impedance environment. the impedances are not the impedances of the device, th ey are the impedances presented to the device via a n rf circuit or load-pull system. the impedances list ed follow an optimized trajectory to maintain high power and high efficiency. test conditions: v ds = 28 v, i dq = 200 ma test signal: pulse width = 100 sec, duty cycle = 20% load-pull data at 3 ghz load-pull data at 4 ghz load-pull data at 5 ghz load-pull data at 6 ghz
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 5 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? 30 32 34 36 38 40 42 44 46 18 19 20 21 22 23 24 25 26 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 1000mhz, 100us 20%, vds = 28v idq = 200ma gain deff. pae z s = 3.92 + j1.97 z l = 7.67 + j5.39 30 32 34 36 38 40 42 44 46 15 16 17 18 19 20 21 22 23 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 2000mhz, 100 s 20%, v ds = 28v i dq = 200ma gain deff. pae z s = 2.03 - j2.16 z l = 6.30 + j2.80 30 32 34 36 38 40 42 44 46 10 11 12 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 3000mhz, 100 s 20%, v ds = 28v i dq = 200ma gain deff. pae z s = 3.92 - j6.85 z l = 5.78 - j2.51 32 34 36 38 40 42 44 46 48 9 10 11 12 13 14 15 16 17 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 32 34 36 38 40 42 44 46 48 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 4000mhz, 100 s 20%, v ds = 28v i dq = 200ma gain deff. pae z s = 6.37 - j13.01 z l = 4.99 - j4.31 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 15 16 17 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 5000mhz, 100 s 20%, v ds = 28v i dq = 200ma gain deff. pae z s = 18.23 - j11.79 z l = 7.11 - j7.54 30 32 34 36 38 40 42 44 46 10 11 12 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 30 32 34 36 38 40 42 44 46 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] t1g6003028-fl gain deff. and pae vs. pout 6000mhz, 100 s 20%, v ds = 28v i dq = 200ma gain deff. pae z s = 11.89 - j0.35 z l = 6.31 - j12.07 typical performance (cont.) performance is measured at dut reference plane
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 6 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? performance over temperature: gain, efficiency and output power performance measured in triquint?s 5.4 ghz to 5.9 g hz evaluation board at 3 db compression . t1g6003028-fl gain vs. temp . t1g6003028-fl power vs. temp. v ds = 28 v, i dq = 200 ma; pulse: 100 s, 20% v ds = 28 v, i dq = 200 ma; pulse: 100 s, 20% t1g6003028-fl drain eff. vs. temp . t1g6003028-fl pae vs. temp. v ds = 28 v, i dq = 200 ma; pulse: 100 s, 20% v ds = 28 v, i dq = 200 ma; pulse: 100 s, 20%
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 7 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? evaluation board performance: 5.4 to 5.9 ghz output power and gain at 3 db compression v ds = 28 v, i dq = 200 ma; pulse: 100 sec, 20% drain efficiency and power added efficiency at 3 db compression v ds = 28 v, i dq = 200 ma; pulse: 100 sec, 20% 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 45.00 50.00 5.40 5.50 5.60 5.70 5.80 5.90 gain (db) output power (w) frequency (ghz) power (w) gain (db) 35 40 45 50 55 5.40 5.50 5.60 5.70 5.80 5.90 efficiency (%) frequency (ghz) drain eff. (%) pae (%)
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 8 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit bias - up procedure bias - down procedure vg set to -5.0v turn off rf signal vd set to 28 v turn off vd and wait 1 second to allow drain capacitor dissipation adjust vg more positive until quiescent id is 200 m a. this will be ~ vg = -3.6 v typical turn off vg apply rf signal
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 9 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications information evaluation board layout top rf layer is 0.020? thick rogers ro4350b, r = 3.48. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. bill of materials reference des. value qty manufacturer part number c1 0.3 pf 1 atc atc600s0r3 c2 0.2 pf 1 atc atc600s0r2 l1, l2 8.8 nh 2 coilcraft 1606-8 c3, c4, c6, c7, c8 3 pf 5 atc atc600s3r0 c5 0.4 pf 1 atc atc600s0r5 r1 97.6 ohms 1 venkel cr0604-16w-97r6ft r2 4.7 ohms 1 newark 37c0064 r3 330 ohms 1 newark tnpw1206330rbt9et1-e3 r4 50 ohms 1 atc crcw120651r0fkea c9, c10 220 pf 2 avx avx06035c22kat2a c11, c12 2200 pf 2 vitramon vj1206y222kxa c13, c14 22000 pf 2 vitramon vj1206y223kxa c15 220 uf 1 united chemi-con emvy500ada221mja0g c16 1.0 uf 1 allied 541-1231 l3 48 ohm 1 ferrite, laird tech. 28f0121-0sr-10
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 10 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? pin description the t1g6003028-fl will be marked with the ?3028? de signator and a lot code marked below the part desig nator. the ?yy? represents the last two digits of the cale ndar year the part was manufactured, the ?ww? is th e work week of the assembly lot start, and the ?mxxx? is the pr oduction lot number. pin symbol description 1 vd/ rf out drain voltage/ rf output matched to 50 ohms; see ap plication circuit on page 9 as an example. 2 vg/rf in gate voltage/ rf input matched to 50 ohms; see appl ication circuit on page 9 as an example 3 flange source connected to ground; see application circuit on page 9 as an example.
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 11 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information package information and dimensions all dimensions are in millimeters. this package is lead-free/rohs-compliant. the plati ng material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and t in-lead (maximum 245 c reflow temperature) solderi ng processes.
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 ? 2012 triquint semiconductor, inc. product compliance information esd information esd rating: class 1a value: 250 v test: human body model (hbm) standard: jedec standard jesd22 msl rating level 3 at +260 c convection reflow the part is r ated moisture sensitivity level jedec standard ipc/jedec j -std- 020. eccn us department of commerce ear99 recommended soldering temperature profile 6 ghz, gan rf power transistor - 12 of 13 - disclaimer: subject to change without notice connecting the digital world to the information human body model (hbm) jedec standard jesd22 -a114 solderability compatible with the latest version of j lead free solder, 260 c this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free ated moisture sensitivity level 3 at 260c per 020. recommended soldering temperature profile disclaimer: subject to change without notice connecting the digital world to the global network ? compatible with the latest version of j -std-020, compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and this product also has the following attributes: halogen free (chlorine, bromine) ) free
t1g6003028-fl 30w, 28v, dc ? 6 ghz, gan rf power transistor data sheet: rev - 10/16/2012 - 13 of 13 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding t he information contained herein. triquint assumes no responsibility or liability whatsoever for any of t he information contained herein. triquint assumes no responsibili ty or liability whatsoever for the use of the infor mation contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is ent irely with the user. all information contained her ein is subject to change without notice. customers should obtain and verify the latest relevant information before plac ing orders for triquint products. the information contained herei n or any use of such information does not grant, ex plicitly or implicitly, to any party any patent rights, license s, or any other intellectual property rights, wheth er with regard to such information itself or anything described by su ch information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications wher e a failure would reasonably be expected to cause s evere personal injury or death.

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